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The Team members develop, simulate and measure (in parallel) about 10 nano-scale silicon-based electro-optics coupled devices.


SOITAM - Silicon-On-Insulator Thermo-Activated Modulator


SOIPAM - Silicon-On-Insulator Photo-Activated Modulator

Abstract: A new nanoscale silicon-based modulator has been investigated at different temperatures. In addition to these two advantages, nanoscale dimensions (versus MEMS temperature sensors) and integrated silicon-based material (versus polymers), the third novelty of such optoelectronic device is that it can be activated as a Silicon-On-Insulator Photoactivated Modulator (SOIPAM) or as a Silicon-On-Insulator Thermo-activated Modulator (SOITAM).

Collaboration with Prof. Zeev Zalevsky, from Bar-Ilan University, the Faculty of Engineering.

View of the packaged chip including up to 12 devices. The V-groove is located in the central area illumated by a pulsed visible laser source (532nm). *

SEM cross-view of fabricated SOIPAM -

first generation device. Scales are in microns. *

* A. Zev, A. Karsenty, A. Chelly, Z. Zalevsky, "Nanoscale Silicon-On-Insulator Photo-Activated Modulator Building Block for Optical Communication", IEEE Photonics Technology Letters, Vol. 28, No. 5, pp. 569-572, March 1, 2016.

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