Dr. Avi Karsenty
Advanced Laboratory of Electro-Optics (ALEO)
JCT Nanotechnology Center for Research & Education
Silicon Photonics Smart Nanoscale Devices
Architecture, Design, Simulations, Models & Testing
Nano Fabrication
SOIPAM - Silicon-On-Insulator Photo-Activated Modulator
SEM cross-view of fabricated SOIPAM first generation device. Scales are in microns. *
Collaboration with Prof. Zeev Zalevsky,
from Bar-Ilan University, the Faculty of Engineering.
Selected Examples of complex devices
SOI MOS Light Emitting Transistor
Detailed
Bonding
Top view
SOI MOS Light Emitting Transistor
Video
Bonding
Side view
SOIPAM - Silicon-On-Insulator Photo-Activated Modulator
Abstract: A new nanoscale silicon-based modulator has been investigated at different temperatures. In addition to these two advantages, nanoscale dimensions (versus MEMS temperature sensors) and integrated silicon-based material (versus polymers), the third novelty of such optoelectronic device is that it can be activated as a Silicon-On-Insulator Photoactivated Modulator (SOIPAM) or as a Silicon-On-Insulator Thermo-activated Modulator (SOITAM).
* A. Zev, A. Karsenty, A. Chelly, Z. Zalevsky, "Nanoscale Silicon-On-Insulator Photo-Activated Modulator Building Block for Optical Communication", IEEE Photonics Technology Letters, Vol. 28, No. 5, pp. 569-572, March 1, 2016.
View of the packaged chip including up to 12 devices. The V-groove is located in the central area illumated by a pulsed visible laser source (532nm). *
Collaboration with Prof. Zeev Zalevsky,
from Bar-Ilan University, the Faculty of Engineering.