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Nano Fabrication

SOIPAM - Silicon-On-Insulator Photo-Activated Modulator

SEM cross-view of fabricated SOIPAM first generation device. Scales are in microns. *

Collaboration with Prof. Zeev Zalevsky,
from Bar-Ilan University, the Faculty of Engineering.

Selected Examples of complex devices

SOI MOS Light Emitting Transistor

Detailed

Bonding

Top view

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SOI MOS Light Emitting Transistor

Video

Transparent

Bonding

Side view

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SOIPAM - Silicon-On-Insulator Photo-Activated Modulator

Abstract: A new nanoscale silicon-based modulator has been investigated at different temperatures. In addition to these two advantages, nanoscale dimensions (versus MEMS temperature sensors) and integrated silicon-based material (versus polymers), the third novelty of such optoelectronic device is that it can be activated as a Silicon-On-Insulator Photoactivated Modulator (SOIPAM) or as a Silicon-On-Insulator Thermo-activated Modulator (SOITAM).

* A. Zev, A. Karsenty, A. Chelly, Z. Zalevsky, "Nanoscale Silicon-On-Insulator Photo-Activated Modulator Building Block for Optical Communication", IEEE Photonics Technology Letters, Vol. 28, No. 5, pp. 569-572, March 1, 2016.

View of the packaged chip including up to 12 devices. The V-groove is located in the central area illumated by a pulsed visible laser source (532nm). *

Collaboration with Prof. Zeev Zalevsky,
from Bar-Ilan University, the Faculty of Engineering.