MOSQWELL (Metal-Oxide-Silicon Quantum WELL) is a MOSFET concept that uses quantum wells to overcome silicon’s indirect bandgap and allow light emission. The quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and sandwiched between two oxide layers. The device’s coupled optical and electrical properties have been simulated for channel thicknesses varying from 2 to 9 nm. The results show that this device can emit NIR radiation in the 1 to 2 μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled through the drain-source voltage, while the peak emission wavelength depends mostly on the channel thickness and to a lesser extent on the drain-source voltage. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages.