top of page

Diamond Electronic Devices

Diamond electronics

As an ultra-wideband material, diamond is a promising candidate for overcoming some of the limitations of current semiconductor technologies. As it possesses high thermal conductivity, breakdown field and carrier mobilities, diamond transistors are very appealing for applications in power and high frequency (RF) electronics. A major setback to realizing diamond electronic devices is the lack of shallow dopants. To date, boron (acceptor) is the most used one despite its high activation energy of 0.37 eV. A workaround is found in surface conduction, first observed in 1989. However, a complete understanding of the surface transport mechanisms is still lacking. There are also issues achieving low resistance and robust contact technology. This research program aims to simulate and model a High-Voltage Diamond Metal-Oxide-Semiconductor Field Effect Transistor (HV-MOSFET).

Articles

Forthcoming

​Jerusalem College of Technology

21 Havaad Haleumi St

Jerusalem 9116001, Israel​​

Tel: +972-2-6751140

​

  • ReaserchGate
  • Google Scholar
  • LinkedIn
bottom of page